Using lattice distortions to improve carrier mobility in 2D semiconductors

The researchers’ method: introducing ripples in 2D material, molybdenum disulfide to achieve two orders of magnitude enhancement in carrier mobility at room temperature, allowing electrons to move faster through the material. Credit: Dr. Wu Jing, A*STAR, Institute of Materials Research and Engineering.

Two-dimensional (2D) semiconductors are semiconducting materials with thicknesses on the atomic scale, which have exceptional electronic properties. In the future, these materials could have the potential to replace silicon in the development of numerous electronic and optoelectronic devices.

Despite their advantages, the use of 2D semiconductors has so far been limited, partially due to their low carrier …
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