Boosting memory performance with strong ion bombardment


Recently, researchers have developed new technology that dramatically improves the performance of flash memory by a strong ion bombardment process. This memory platform can reliably express multiple data in a single device, rendering it applicable for future neuromorphic computing as well as increasing memory capacity.

POSTECH professor Yoonyoung Chung (Department of Electrical Engineering and Department of Semiconductor Engineering) and Ph.D. candidate Seongmin Park (Department of Electrical Engineering), in joint research with Samsung Electronics, have developed a flash memory with increased data storage by intentionally generating defects.
As artificial intelligence technology advances, developing a novel semiconductor device optimized …

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