Building a 900-pixel imaging sensor using an atomically thin material

2D APS. a, 3D schematic (left) and optical image (right) of a monolayer MoS2 phototransistor integrated with a programmable gate stack. The local back-gate stacks, comprising atomic layer deposition grown 50 nm Al2O3 on sputter-deposited Pt/TiN, are patterned as islands on top of an Si/SiO2 substrate. The monolayer MoS2 used in this study was grown via an MOCVD technique using carbon-free precursors at 900 °C on an epitaxial sapphire substrate to ensure high film quality. Following the growth, the film was transferred onto the TiN/Pt/Al2O3 back-gate islands and subsequently patterned, etched and contacted to fabricate phototransistors …
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