Gallium oxide-based devices can operate in extreme environments, such as outer space, where it can withstand high temperatures and radiation without serious degradation. Credit: KAUST; Eliza Mkhitaryan.
Among the many hazards encountered by space probes, exposure to radiation and huge temperature swings pose particular challenges for their electronic circuits. Now KAUST researchers have invented the first ever flash memory device made from gallium oxide, a material that can withstand these harsh conditions far better than conventional electronics.
Gallium oxide is a semiconductor—although it is usually a poor conductor of electricity, incorporating certain impurities can enable it to carry an …
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